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EMC04N08F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

BVDSS 75V RDSON (MAX.) 4.4mΩ ID 86A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating& Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Cu

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Datasheet Details

Part number EMC04N08F
Manufacturer Excelliance MOS
File Size 360.85 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMC04N08F Datasheet

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EMC04N08F Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 75V RDSON (MAX.) 4.4mΩ ID 86A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating& Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 86 ID TC = 100 °C 54 IDM 200 Avalanche Current IAS 90 Avalanche Energy L = 0.1mH, ID=90A, RG=25Ω EAS 405 Repetitive Avalanche Energy2 L = 0.05mH EAR 202 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 56 22 -55 to 150 100% UIS testing in condition of VD=38V, L=0.
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