EMBA5N10V Datasheet - Excelliance MOS

EMBA5N10V MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 150mΩ ID 8A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=8A, RG=25Ω L = 0.05mH Power Dissipatio.

EMBA5N10V Datasheet (201.59 KB)

EMBA5N10V Datasheet Preview — Preview of EMBA5N10V PDF

Datasheet Details

Part number:

EMBA5N10V

Manufacturer:

Excelliance MOS

File Size:

201.59 KB

Description:

Mosfet.

📁 Related Datasheet

EMBA5N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA5N10AS N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA5N10CS MOSFET (Excelliance MOS)

EMBA5N10G MOSFET (Excelliance MOS)

EMBA5A10G MOSFET (Excelliance MOS)

EMBA5C10A MOSFET (Excelliance MOS)

EMBA5C10G N & P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA5P06J P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMBA5N10V MOSFET Excelliance MOS

EMBA5N10V Distributor