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EMB50P03JS - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

P-CH BVDSS -30V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TA=25℃ 50mΩ 85mΩ -4.0A Single P Channel MOSFET Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltag

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Datasheet Details

Part number EMB50P03JS
Manufacturer Excelliance MOS
File Size 323.23 KB
Description Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB50P03JS Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: P-CH BVDSS -30V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TA=25℃ 50mΩ 85mΩ -4.0A Single P Channel MOSFET Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current1 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.
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