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EMB45A06G - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMB45A06G
Manufacturer Excelliance MOS
File Size 188.61 KB
Description Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB45A06G Datasheet

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EMB45A06G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 6 ID TA = 100 °C 4.5 IDM 24 Avalanche Current IAS 15 Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω EAS 7.2 Repetitive Avalanche Energy2 L = 0.05mH EAR 3.6 Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2 0.8 ‐55 to 150 100% UIS testing in condition of VD=30V, L=0.
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