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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS RDSON (MAX.)
N‐CH 40V 28mΩ
P‐CH ‐40V 44mΩ
D1 G1
D2 G2
ID
7A
‐6A
S1
S2
EMB28C04G
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
ID IDM PD Tj, Tstg
LIMITS
N‐CH
P‐CH
±20
±20
7
‐6
6
‐5
28
‐24
2
1.3 ‐55 to 150
UNIT V
A W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
EMB28C04G Datasheet
