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EMB26N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMB26N10A
Manufacturer Excelliance MOS
File Size 226.87 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB26N10A Datasheet

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 30mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=30A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature.
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