EMB12P03G Datasheet (Excelliance MOS) - P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB12P03G, P-Channel Logic Level Enhancement Mode Field Effect Transistor

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.)(VGS=‐10V) 10mΩ ID ‐13A G P Channel MOSFET UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PIN1 PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 VGS ±25 TA = 25 °C ‐13 ID TA = 100 °C ‐8 IDM ‐52 Avalanche Current Avalanche Energy L = 0.