EMB09N03V - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

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Datasheet Details

Part number	EMB09N03V
Manufacturer	Excelliance MOS
File Size	446.02 KB
Description	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB09N03V-ExcellianceMOS.pdf

EMB09N03V Product details

Description

N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 9.0mΩ 13.5mΩ 44A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4 TC = 25 °C TA = 25 °C TC = 100 °C L = 0.1mH L = 0.05mH Power Dissipation1 TC =

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Published: Jun 23, 2024 |