EMB09K03VP - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

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Datasheet Details

Part number	EMB09K03VP
Manufacturer	Excelliance MOS
File Size	668.00 KB
Description	Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB09K03VP-ExcellianceMOS.pdf

EMB09K03VP Product details

Description

Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 20.0mΩ 9.0mΩ 30.0mΩ 15.0mΩ ID @TC=25℃ 32.0A 49.0A ID @TA=25℃ 8.0A 13.0A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche E

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Published: Jun 23, 2024 |