EMB08N06CS Datasheet (Excelliance MOS) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB08N06CS, N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB08N06CS N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 8mΩ ID 60A G UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C 60 ID TC = 100 °C 35 IDM 170 Avalanche Current IAS 60 Avalanche Energy L = 0.1mH, ID=60A, R