EMB07P03V Datasheet (Excelliance MOS) - P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB07P03V, P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 7.8mΩ ID -26A P-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current ID TA = 25 °C TC = 100 °C Pulsed Drain Current1 IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS=-26A, RG=25Ω EAS Rep