EMB06N03A Datasheet (Excelliance MOS) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB06N03A, N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 70A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 TC = 25 °C 70 Continuous Drain Current ID TC = 100 °C 45 Pulsed Drain Current1 IDM 280 Avalanche Current IAS 40 Avalanche Energy L = 0.1mH EAS 80 Rep