Datasheet Details
- Part number
- TPGEW1S09H
- Manufacturer
- Excelitas
- File Size
- 659.76 KB
- Datasheet
- TPGEW1S09H-Excelitas.pdf
- Description
- Low-Cost High-Power Laser-Diode
TPGEW1S09H Description
DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Se.
PGEW1SXXH Single chip laser.
Single epi-cavity
DPGEW1SXXH Single chip laser.
Double epi-cavity
TPGEW1SXXH Single chip laser.
TPGEW1S09H Features
* Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area
* Peak power over 100 W at 20 ns pulse width
* High reliability
* Small emitting areas increase
fiber coupled output
* Lower cost plastic packaging for
high volume
TPGEW1S09H Applications
* Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers.
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