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QPGEW1S03H, QPGEW1S09H Low-Cost High-Power Laser-Diode

QPGEW1S03H Description

DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Se.
PGEW1SXXH Single chip laser. Single epi-cavity DPGEW1SXXH Single chip laser. Double epi-cavity TPGEW1SXXH Single chip laser.

QPGEW1S03H Features

* Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area
* Peak power over 100 W at 20 ns pulse width
* High reliability
* Small emitting areas increase fiber coupled output
* Lower cost plastic packaging for high volume

QPGEW1S03H Applications

* Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: QPGEW1S03H, QPGEW1S09H. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
QPGEW1S03H, QPGEW1S09H
Manufacturer
Excelitas
File Size
680.19 KB
Datasheet
QPGEW1S09H-Excelitas.pdf
Description
Low-Cost High-Power Laser-Diode
Note
This datasheet PDF includes multiple part numbers: QPGEW1S03H, QPGEW1S09H.
Please refer to the document for exact specifications by model.

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Low-Cost High-Power Laser-Diode Excelitas
Excelitas QPGEW1S03H-like datasheet