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EID1314A1-12 - 13.75-14.50 GHz 12-Watt Internally Matched Power FET

Features

  • 13.75-14.50 GHz Bandwidth.
  • Input/Output Impedance Matched to 50 Ohms.
  • +41.0 dBm Output Power at 1dB Compression.
  • 6.0 dB Power Gain at 1dB Compression.
  • 23% Power Added Efficiency.
  • Hermetic Metal Flange Package.
  • 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

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Datasheet Details

Part number EID1314A1-12
Manufacturer Excelics Semiconductor
File Size 108.77 KB
Description 13.75-14.50 GHz 12-Watt Internally Matched Power FET
Datasheet download datasheet EID1314A1-12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EID1314A1-12 UPDATED: 07/12/2007 13.75–14.50 GHz 12-Watt Internally Matched Power FET Excelics EID1314A1-12 .827±.010 .669 .120 MIN FEATURES • 13.75-14.50 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +41.0 dBm Output Power at 1dB Compression • 6.0 dB Power Gain at 1dB Compression • 23% Power Added Efficiency • Hermetic Metal Flange Package • 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL Caution! ESD sensitive device. MIN 40.0 5.0 TYP 41.0 6.0 ±0.6 23 3960 5900 -1.2 2.5 5100 8200 -2.5 3.5 o P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.
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