EM68932DVKB - 4M x 32 Mobile DDR Synchronous DRAM

Etron Technology

Datasheet Details

Part number	EM68932DVKB
Manufacturer	Etron Technology
File Size	444.58 KB
Description	4M x 32 Mobile DDR Synchronous DRAM
Datasheet	EM68932DVKB_EtronTechnology.pdf

Table 2.

Fast clock rate: 166/133 MHz Differential Clock CK & CK Bi-directional DQS Four internal banks, 1M x 32-bit for each bank Edge-aligned with read data, centered in write data Programmable Mode and Extended Mode Registers - CAS Latency: 2, or 3 - Burst length: 2, 4, or 8 - Burst Type: Sequential & Interleaved - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength).
Individual byte writes mask control.
DM Write Latency = 0.

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Published: Dec 9, 2011 |