TVMNG30H - 60V N-Channel MOSFET

Eris

Datasheet Details

‧RDS(ON) ≦3Ω@VGS=10V ‧RDS(ON) ≦4Ω@VGS=4.5V ‧High Density Cell Design For Ultra Low On-Resistance ‧Very Low Leakage Current In Off Condition ‧ESD Protected 2KV HBM Ordering Information Part No. Remark TVMNG30H General TVMNG30H-H Halogen Free Package SOT-883 Maximum Ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Pulsed Drain Current (NOTE 1) Power Dissipation Junction and Storage Temperature Range Typical Thermal Resistance NOT.

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Published: Aug 24, 2025 |