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EDE1104AASE - (EDE1104AASE / EDE1108AASE) 1G bits DDR2 SDRAM organized

Elpida Memory

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Datasheet Details

Part number	EDE1104AASE
Manufacturer	Elpida Memory
File Size	693.73 KB
Description	(EDE1104AASE / EDE1108AASE) 1G bits DDR2 SDRAM organized
Datasheet	EDE1104AASE_ElpidaMemory.pdf

EDE1104AASE Product details

Description

The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks.

Features

Power supply: VDD, VDDQ = 1.8V ± 0.1V.
Double-data-rate architecture: two data transfers per clock cycle.
Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
DQS is edge aligned with data for READs: centeraligned with data for WRITEs.
Differential clock inputs (CK and /CK).
DLL aligns DQ and DQS transitions with CK transitions.
Commands entered on e.

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Published: Jan 8, 2007 |