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M24L48512DA - 4-Mbit (512K x 8) Pseudo Static RAM

Description

of read and write modes.

The M24L48512DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 512K words by 8 bits.

Features

  • Advanced low power architecture High speed: 55 ns, 60 ns and 70 ns Wide voltage range: 2.7V to 3.6V Typical active current: 1mA @ f = 1 MHz Low standby power Automatic power-down when deselected Enable ( WE )inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O15) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by asserting.

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Datasheet Details

Part number M24L48512DA
Manufacturer Elite Semiconductor Memory Technology
File Size 309.44 KB
Description 4-Mbit (512K x 8) Pseudo Static RAM
Datasheet download datasheet M24L48512DA Datasheet
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ESMT PSRAM www.DataSheet4U.com M24L48512DA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55 ns, 60 ns and 70 ns Wide voltage range: 2.7V to 3.6V Typical active current: 1mA @ f = 1 MHz Low standby power Automatic power-down when deselected Enable ( WE )inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O15) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by asserting the Chip Enable One ( CE1 ) and Output Enable ( OE ) inputs LOW while forcing Write Enable ( WE ) HIGH and Chip Enable Two(CE2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.
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