LP3407LT1G-ES Datasheet (ElecSuper)

LP3407LT1G-ES, P-channel MOSFET

The LP3407LT1G-ES is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Device is suitable for use in DC-DC conversion, power switch and charging circuit.

Standard Product LP3407LT1G-ES is Pb-free.

Feat

LP3407LT1G-ES Features

* 30V, RDS(ON)=46mΩ(Typ.) @VGS=-10V RDS(ON)=62mΩ(Typ.) @VGS=-4.5V

* Fast Switching

* High density cell design for low RDS(on)

* Material: Halogen free

* Reliable and rugged

* Avalanche Rated

* Low leakage current 3. Applications

* PWM applications

* Load switch