10N65F Datasheet (EVVO) - 650V N-Channel Enhancement Mode MOSFET

10N65F, 650V N-Channel Enhancement Mode MOSFET

The 10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and highe

10N65F Features

* VDS = 650V ID =10A RDS(ON) < 0.9Ω @ VGS=10V （Type：0.75Ω） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value TO-220F TO-220 VDSS Drain-Source Voltage (VGS = 0V) 650 ID Continuous Drain Cur