TS20DN03 Dual N-Channel Power MOSFET

Description

TS20DN03 Dual N-Channel Power MOSFET VDSS（V） 30 RDS (ON) 15mΩ(Typ)@VGS=10V 21mΩ(Typ)@VGS=4.5V ID(A) 20 Pin .
FEATURE:. The TS20DN03is the high cell density trenched Dual N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the.

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Datasheet Specifications

Part number: TS20DN03
Manufacturer: ETC
File Size: 280.76 KB
Datasheet: TS20DN03-ETC.pdf
Description: Dual N-Channel Power MOSFET

Applications

* Green Device Available
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* Advanced high cell density Trench ú technology PDFN3X3-8L ´ Ordering and Marking Information Product ID Marking Package Packaging ± TS20DN03 PDFN3X3-8L Tape&Reel Absolute M

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TS20DN03 Dual N-Channel Power MOSFET ETC

ETC TS20DN03-like datasheet