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OP299 - GaAlAs Plastic Infrared Emitting Diode

General Description

The OP294 and OP299 are gallium arsenide infrared emitting diodes designed for low current or power limited applications (such as battery supplies).

Key Features

  • Characterized at 5mA for battery operated systems or other low drive current systems.
  • Wide irradiance pattern (OP294) or narrow irradiance pattern (OP299).
  • Significantly higher power output than GaAs at equivalent drive currents.
  • Wavelength matched to silicon’ s peak response.
  • T-1 3/4 package Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Voltage.
  • .

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Datasheet Details

Part number OP299
Manufacturer Unknown Manufacturer
File Size 226.22 KB
Description GaAlAs Plastic Infrared Emitting Diode
Datasheet download datasheet OP299 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Bulletin OP294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 Features • Characterized at 5mA for battery operated systems or other low drive current systems • Wide irradiance pattern (OP294) or narrow irradiance pattern (OP299) • Significantly higher power output than GaAs at equivalent drive currents • Wavelength matched to silicon’ s peak response • T-1 3/4 package Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Peak Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .