ISS133 - Switching diode

Datasheet Details

1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ. ) 3) High reliability. 29.0±1.0 2.7±0.3 29.0±1.0 φ1.8±0.2 ROHM : MSD EIAJ :.
JEDEC : DO-34 !Construction Silicon epitaxial planar !Absolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 90 80 400 130 600 300 175.
65~.

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Published: May 4, 2006 |