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FLU35ZM - L-Band Medium & High Power GaAs FET

Description

The FLU35ZM is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range.

This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications.

Features

  • High Output Power: P1dB=35.5dBm(typ. ) High Gain: G1dB=11.5dB(typ. ) Low Cost Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET.

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Datasheet Details

Part number FLU35ZM
Manufacturer Unknown Manufacturer
File Size 225.47 KB
Description L-Band Medium & High Power GaAs FET
Datasheet download datasheet FLU35ZM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLU35ZM FEATURES High Output Power: P1dB=35.5dBm(typ.) High Gain: G1dB=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
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