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FC4B22180L

The FC4B22180L is Gate resistor installed Dual N-channel MOS FET designed by ETC.

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FC4B22180L Gate resistor installed Dual N-channel MOS FET by ETC - Datasheet Preview — Datasheet preview – FC4B22180L

Datasheet Details

Part number	FC4B22180L
Manufacturer	ETC
File Size	604.55 KB
Description	Gate resistor installed Dual N-channel MOS FET
Datasheet	FC4B22180L-ETC.pdf
Additional preview pages of the FC4B22180L datasheet.

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Features

s y Low source-source ON resistance:Rss(on) typ. = 9.4 mΩ（VGS = 4.5 V) y CSP（Chip Size Package) y RoHS compliant (EU RoHS / MSL:Level 1 compliant).
Marking Symbol: 17.
Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard).
Absolute Maximum Ratings Ta = 25 °C Parameter Symbol Source-source Voltage VSS Gate-source Voltage Source Current Total Power Dissipation DC.
1 DC.
2 Pulse.
3 DC.
1 DC.
2 VGS IS1 IS2 ISp PD1 P.

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Published: Oct 20, 2024 |