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ELM14801AA - Dual P-Channel Enhancement Mode Power MOS FET

Description

ELM14801AA uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

It may be used in a common drain arrangement to form a bidirectional blocking switch.

Features

  • VDS (V) = -30V ID = -5A RDS(ON) < 49mΩ (VGS = -10V) RDS(ON) < 64mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) SOP-8 Top View.

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Datasheet Details

Part number ELM14801AA
Manufacturer Unknown Manufacturer
File Size 173.55 KB
Description Dual P-Channel Enhancement Mode Power MOS FET
Datasheet download datasheet ELM14801AA Datasheet

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ELM14801AA Dual P-Channel Enhancement Mode Power MOS FET General Description ELM14801AA uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirectional blocking switch. Features VDS (V) = -30V ID = -5A RDS(ON) < 49mΩ (VGS = -10V) RDS(ON) < 64mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.
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