BRF4N60 - N-CHANNEL MOSFET

Datasheet Details

Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG 600 4.0 2.5 16 ±30 240 10 4.0 33 -55 to 150 V A A A V mJ mJ A W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=600V VGS=0V IDSS VDS=480V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=2.0A gFS VDS=40V ID=2.0A VSD VGS=0V IS=4.0A Ciss Coss VDS=25V VGS=0V f=1.0M.

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Published: Oct 12, 2010 |