2N5980 Datasheet (ETC) - HIGH POWER PNP SILICON TRANSISTORS

2N5980, HIGH POWER PNP SILICON TRANSISTORS

2N5980 2N59812N5982(SILICON) MJE5980 MJE5981 MJE5982 HIGH POWER PNP SILICON TRANSISTORS designed for use in general-purpose amplifier and switching applications.

DC Current Gain Specified to 8 Amperes hFE = 20-120@ IC = 4.0 Adc = 7.0 (Min) @ IC = 8.0 Adc Collector-Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - 2N5980, MJE5980 = 60 Vdc (Min) - 2N5981, MJE5981 = 80 Vdc (Min) - 2N5982, MJE5982 High Current Gain - 8andwidth Product - fT = 2.0 MHz (Min) @ IC =