2N5859 Datasheet - ETC

2N5859 NPN SILICON ANNULAR SWITCHING TRANSISTOR

2N5859 (SILICON) NPN SILICON ANNULAR SWITCHING TRANSISTOR designed for high current, !ligh speed switching applications. Ideally suited for ferrite core and plated wire memory driver, hammer driver, or MOS translator applications. Excellent Current Gain - Bandwidth Product fT = 250 MHz (Min) @IC = 50 mAde Low Collector Base Capacitance - Ccb =7.0 pF (Max) @VCB = 10 Vdc Low Coliector Emitter Saturation Voltage VCE(sat) = 0.7 Vdc (Max) @ IC = 1.0.

2N5859 Datasheet (270.63 KB)