2N5161 Datasheet (ETC) - PNP silicon RF power transistors

2N5161, PNP silicon RF power transistors

2N5161 (SILICON) 2N5162 STYLE 1: PIN 1.

EMITTER 2.

BASE 3.

COLLECTOR CASE 36 (TO-60) Case common to emitter PNP silicon RF power transistors designed for amplifier or oscillator applications in military and industrial equipment.

Suitable for use as Class B or C output or power oscillator in VHF applications MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation@ TC =25°C Derate above 25°C Operating and Storage Jun