ET830 - N-Channel MOSFET

Product Overview

ESTEK

Datasheet Details

Part number	ET830
Manufacturer	ESTEK
File Size	325.83 KB
Description	N-Channel MOSFET
Datasheet	ET830 Datasheet
Additional preview pages of the ET830 datasheet.

Product details

Description

The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Features

RDS(ON) = 1.5Ω@VGS = 10 V Low gate charge ( typical 20nC) Fast switching capability Avalanche energy specified Improved dv/dt capability.
Symbol.
Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation Junction Temperature Storage Temperature ＊ Symbol VDSS VGSS Tc=25℃ Tc=100℃ (Note 1) ID IDP EAR EAS dv/dt PD TJ TST.

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Other Datasheets by ESTEK

ET840 - N-Channel MOSFET

Published: Jul 3, 2014 |