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M13S64164A-6TG2Y - 1M x 16 Bit x 4 Banks Double Data Rate SDRAM

Download the M13S64164A-6TG2Y datasheet PDF. This datasheet also covers the M13S64164A variant, as both devices belong to the same 1m x 16 bit x 4 banks double data rate sdram family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition z Four bank operation z CAS Latency : 2, 2.5, 3 z Burst Type : Sequential and Interleave z Burst Length : 2, 4, 8 z All inputs except data & DM are sampled at the rising edge of the system clock (CLK) z Data I/O transitions on both edges of data strobe (DQS) z DQS is edge-aligned with data for REA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M13S64164A_EliteSemiconductorMemoryTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number M13S64164A-6TG2Y
Manufacturer ESMT
File Size 1.19 MB
Description 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
Datasheet download datasheet M13S64164A-6TG2Y Datasheet

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Other Datasheets by ESMT

Part Number Description
M13S64164A-6TG 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6BG 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6BG2Y 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-4BG2Y 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-4TG2Y 1M x 16 Bit x 4 Banks Double Data Rate SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT M13S64164A (2Y) DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition z Four bank operation z CAS Latency : 2, 2.5, 3 z Burst Type : Sequential and Interleave z Burst Length : 2, 4, 8 z All inputs except data & DM are sampled at the rising edge of the system clock (CLK) z Data I/O transitions on both edges of data strobe (DQS) z DQS is edge-aligned with data for READs; center-aligned with data for WRITEs z Data mask (DM) for write masking only z VDD = 2.5V ± 0.2V, VDDQ = 2.5V ± 0.2V z 15.6us refresh interval z Auto & Self refresh z 2.
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