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M12L2561616A-7TG2S - Synchronous DRAM

Download the M12L2561616A-7TG2S datasheet PDF. This datasheet also covers the M12L2561616A variant, as both devices belong to the same synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst Read single write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K cycle).
  • All Pb-free products are RoHS-Compli.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M12L2561616A_EliteSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ESMT

Part Number Description
M12L2561616A-7BG2S Synchronous DRAM
M12L2561616A-5BG2S Synchronous DRAM
M12L2561616A-5TG2S Synchronous DRAM
M12L2561616A-6BG2S Synchronous DRAM
M12L2561616A-6TG2S Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT SDRAM FEATURES  JEDEC standard 3.3V power supply  LVTTL compatible with multiplexed address  Four banks operation  MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)  All inputs are sampled at the positive going edge of the system clock  Burst Read single write operation  DQM for masking  Auto & self refresh  64ms refresh period (8K cycle)  All Pb-free products are RoHS-Compliant M12L2561616A (2T) 4M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION Product ID M12L2561616A-5TG2T M12L2561616A-6TG2T M12L2561616A-7TG2T M12L2561616A-5BG2T M12L2561616A-6BG2T M12L2561616A-7BG2T Max Package Comments Freq.