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F50L2G41LB-104YG2ME, F50L2G41LB-104YG2M 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory

F50L2G41LB-104YG2ME Description

ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim.

F50L2G41LB-104YG2ME Features

* Voltage Supply: 3.3V (2.7V~3.6V)
* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
* Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: F50L2G41LB-104YG2ME, F50L2G41LB-104YG2M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
F50L2G41LB-104YG2ME, F50L2G41LB-104YG2M
Manufacturer
ESMT
File Size
1.32 MB
Datasheet
F50L2G41LB-104YG2M-ESMT.pdf
Description
3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
Note
This datasheet PDF includes multiple part numbers: F50L2G41LB-104YG2ME, F50L2G41LB-104YG2M.
Please refer to the document for exact specifications by model.

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3.3V Gbit Gbit SPI-NAND Flash Memory ESMT
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