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F50L2G41LB-104YG2ME - 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory

Download the F50L2G41LB-104YG2ME datasheet PDF. This datasheet also covers the F50L2G41LB-104YG2M variant, as both devices belong to the same 3.3v 2 gbit (2 x 1 gbit) spi-nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • Voltage Supply: 3.3V (2.7V~3.6V).
  • Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
  • Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us.
  • Memory Cell: 1bit/Memory Cell.
  • Support SPI-Mode 0 and SPI-Mode 31.
  • Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms.
  • Hardwa.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F50L2G41LB-104YG2M-ESMT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F50L2G41LB-104YG2ME
Manufacturer ESMT
File Size 1.32 MB
Description 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
Datasheet download datasheet F50L2G41LB-104YG2ME Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined. F50L2G41LB (2M) 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory Values 3.3V x1, x21, x4 104MHz 1-bit 9.6ns 104MT/s 1ms (maximum value) 1ms (maximum value) FEATURES  Voltage Supply: 3.3V (2.7V~3.