EN27LN4G08 - 3.3V NAND Flash Memory

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EON

EN27LN4G08 3.3V NAND Flash Memory by EON - Datasheet Preview — Datasheet preview – EN27LN4G08

Datasheet Details

Part number	EN27LN4G08
Manufacturer	EON
File Size	3.01 MB
Description	3.3V NAND Flash Memory
Datasheet	EN27LN4G08 Datasheet
Additional preview pages of the EN27LN4G08 datasheet.

Product details

Description

EN27LN4G08 The device is a 512Mx8bit with spare 16Mx8bit capacity.The device is offered in 3.3V VCC Power Supply.Its NAND cell provides the most cost-effective solution for the solid state mass storage market.The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.The device contains 4096 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.A program operation allows t

Features

Voltage Supply: 2.7V ~ 3.6V.
Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes.
Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max. ) - Serial Access : 25ns (Min. ).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Page Program Time : 250µs (Typ. ) - Block Erase Time : 2ms (Typ. ).

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Published: Aug 23, 2016 |