1N5711 Datasheet - EIC

1N5711, SCHOTTKY BARRIER DIODES

1N5711 and 1N6263 VRRM : 70V , 60V

Features

* :

Applications

* Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
* This di

1N5711-EIC.pdf