501N04A - RF Power MOSFET

Datasheet Details

SG1 SG2 GATE = = = = 500 V 4.5 A 1.5 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 PDHS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol DRAIN Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C SD1 SD2 1.6mm (0.063 in) from case for 10 s 300 2.
Isolated Substrate.

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Published: Oct 23, 2008 |