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MJD31CQ - 100V NPN HIGH VOLTAGE TRANSISTOR

Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

Features

  • BVCEO > 100V.
  • IC = 3A high Continuous Collector Current.
  • ICM = 5A Peak Pulse Current.
  • Ideal for Power Switching or Amplification.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NOT RECOMMENDED FOR NEW DESIGN USE MJD31CUQ Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > 100V  IC = 3A high Continuous Collector Current  ICM = 5A Peak Pulse Current  Ideal for Power Switching or Amplification Applications  Complementary PNP Type: MJD32CQ  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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