G4812SS N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

Description

DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V(BR)DSS 30V RDS(on) 15mΩ @ VGS= 10V 18.5mΩ @ VGS= 4.5V ID max TA.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it i.

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Datasheet Specifications

Part number: G4812SS
Manufacturer: DIODES ↗
File Size: 233.68 KB
Datasheet: G4812SS-Diodes.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
* Low RDS(ON) - minimizes conduction losses
* Low VSD - reducing the losses due to body diode conduction
* Low Qrr - lower Qrr of the integrated Schottky reduce

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G4812SS N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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