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DSS4160T - NPN LOW SATURATION TRANSISTOR

Features

  • BVCEO > 60V.
  • IC = 1A high Continuous Collector Current.
  • ICM = 2A Peak Pulse Current.
  • RCE(sat) = 280mΩ for a Low Equivalent On-Resistance.
  • Low Saturation Voltage VCE(sat) < 280mV @ 1A.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP capable (Note 4) DSS4160T 60V NPN LOW.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • BVCEO > 60V • IC = 1A high Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 280mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage VCE(sat) < 280mV @ 1A • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP capable (Note 4) DSS4160T 60V NPN LOW SATURATION TRANSISTOR IN SOT23 Mechanical Data • Case: SOT23 • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish — Matte Tin Plated leads, Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.
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