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DMT3011LDT - DUAL N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Mobile Computing Point of Load Mechanical Data Case: V-DFN3030-8 (Type

Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A D VNAEN CWEPDRIONDFUOCRTM A T I O N DMT3011LDT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device Q1 Q2 V(BR)DSS 30V 30V RDS(ON) Max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 11.1mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V ID Max TA = +25°C 8A 6.3A 10.7A 9.6A Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.