Description
This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features
- LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 80mΩ to Minimize On-State Losses Qg = 3.3nC for Ultra-Fast Switching.
- Vgs(th) = -0.7V typ. for a Low Turn-On Potential.
- CSP with Footprint 1.5mm × 1.5mm.
- Height = 0.62mm for Low Profile.
- ESD = 3kV HBM Protection of Gate.
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
- Halogen and Antimony Free. “Green” Device (Note 3).
- Qualified to AEC-Q101 Standards for High Reliability.
DMP2100UCB9-Diodes.pdf
