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DMN3018SFGQ - N-Channel MOSFET

Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

It is qualified to AEC-Q101, supported by a PPAP.

Features

  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEW PRODUCT DMN3018SFGQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 21mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V ID max TA = +25°C 8.5A 6.6A Description This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP. Features and Benefits  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.