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DMN1054UCB4 - N-CHANNEL MOSFET

Description

The DMN1054UCB4 is a Trench MOSFET, engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer.

Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.

Features

  • Trench-CSP Technology with the Lowest on Resistance:.
  • RDS(ON) = 35mΩ to Minimize On-State Losses.
  • Qg = 9.6nC for Ultra-Fast Switching.
  • VGS(TH) = 0.6V Typ. for a Low Turn-On Potential.
  • CSP with Footprint 0.8mm × 0.8mm.
  • Height = 0.375mm for Low Profile.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: X1-WLB0808-4.
  • Terminal Connections: S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Summary (Typ. @ VGS = 4.5V, TA = +25°C) VDSS 8V RDS(ON) 35mΩ Qg 9.6nC Qgd 0.9nC ID 4.0A Description The DMN1054UCB4 is a Trench MOSFET, engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. Applications  DC-DC Converters  Battery Management  Load Switch X1-WLB0808-4 DMN1054UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features  Trench-CSP Technology with the Lowest on Resistance:  RDS(ON) = 35mΩ to Minimize On-State Losses  Qg = 9.6nC for Ultra-Fast Switching  VGS(TH) = 0.6V Typ. for a Low Turn-On Potential  CSP with Footprint 0.8mm × 0.8mm  Height = 0.
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