DGTD65T60S2PT - FIELD STOP IGBT

Product Overview

Diodes

Datasheet Details

Part number	DGTD65T60S2PT
Manufacturer	DIODES
File Size	1.56 MB
Description	FIELD STOP IGBT
Datasheet	DGTD65T60S2PT Datasheet
Additional preview pages of the DGTD65T60S2PT datasheet.

Product details

Description

The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent quality for applications where low conduction losses are essential.

Features

High Speed Switching & Low Power Loss.
VCE(sat) = 1.85V @ IC = 60A.
High Input Impedance.
trr = 110ns (typ) @ diF/dt = 500A/µs.
Eoff = 0.53mJ @ TC=25°C.
Maximum Junction Temperature 175°C.
Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).

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Published: Apr 13, 2020 |