Datasheet Details
| Part number | DP170N03 |
|---|---|
| Manufacturer | Developer Microelectronics |
| File Size | 195.35 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 DP170N03-DeveloperMicroelectronics.pdf
|
| Part number | DP170N03 |
|---|---|
| Manufacturer | Developer Microelectronics |
| File Size | 195.35 KB |
| Description | N-Channel MOSFET |
| Datasheet |
DP170N03-DeveloperMicroelectronics.pdf
|
DP170N03 Single N Channel Enhancement Power MOSFET Product Summary DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge with a 20V gate rating.This device is suitable for use as a load switch or in PWM applications.VDS ID (at VGS=20V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 30 V 13A < 10.5mΩ < 12mΩ RoHS and Halogen-Free Complaint SOP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol P-Channel Drain-Source Voltag
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