MJE13003D - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.

Dc Components

Datasheet Details

Part number	MJE13003D
Manufacturer	Dc Components
File Size	243.87 KB
Description	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	MJE13003D Datasheet

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R MJE13003D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126ML Pinning 1 = Base 2 = Collector 3 = Emitter .148(3.75) .138(3.50) .163(4.12) .153(3.87) .044(1.12) .034(0.87) .060(1.52) .050(1.27) .146(3.70) .136(3.44) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .123(3.12) .113(2.87) Symbol VCEV VCEO VEBO IC IB PD TJ TSTG Rating 700 400 9 1.5 0.75 40 +150 -55 to +150 Unit V V V A A W o o .300(7.62) .290(7.37) 1 2 3 .084(2.

Published: Aug 15, 2007 |