LB123T TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Dc Components

Description

www.DataSheet4U.com DC COMPONENTS CO., LTD.R LB123T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descript.
Designed for high voltage, high speed switching circuits, and amplifier applications .

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Datasheet Specifications

Part number: LB123T
Manufacturer: Dc Components
File Size: 213.84 KB
Datasheet: LB123T_DcComponents.pdf
Description: TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Applications

* . Pinning 1 = Emitter 2 = Collector 3 = Base .041(1.05) .037(0.95) .154(3.91) .150(3.81) TO-126 .304(7.72) .285(7.52) .105(2.66) .095(2.41) .055(1.39) .045(1.14) .152(3.86) .138(3.50) Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol

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LB123T TECHNICAL SPECIFICATIONS NPN EPITAXIAL PLANAR TRANSISTOR Dc Components

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