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DXTA13 - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for applications requiring extremely high current gain.

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Datasheet Details

Part number DXTA13
Manufacturer Dc Components
File Size 261.56 KB
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXTA13 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring extremely high current gain. SOT-89 Pinning 1 = Base 2 = Collector 3 = Emitter .066(1.70) .059(1.50) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC PD TJ TSTG Rating 30 30 10 300 1 +150 -55 to +150 Unit V V V mA W o o .167(4.25) .159(4.05) 1 2 3 .102(2.60) .095(2.40) .020(0.51) .014(0.36) .060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .016(0.41) .014(0.
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